SOI高压LDMOS单粒子烧毁效应机理及脉冲激光模拟研究

Study on Mechanism of Single Event Burnout Effect and Pulse Laser Simulation Experiment for High-Voltage SOI LDMOS

SOI (Silicon-On-Insulator)高压LDMOS (Lateral Double Diffusion Metal Oxide Semiconductor)作为高压集成电路的核心器件,广泛应用于模拟开关、栅驱动及电源管理电路中。通过TCAD仿真软件,开展SOI高压LDMOS器件的单粒子敏感点及器件烧毁机理研究。器件在重离子的影响下产生大量的离化电荷,并在电场作用下发生漂移运动,从而诱发寄生三极管开启,导致器件发生单粒子烧毁(Single Event Burnout,SEB)效应而失效。采取脉冲激光对SOI高压LDMOS器件的单粒子敏感点进行辐射试验,试验结果表明脉冲激光能量为2 n J时,SOI高压LDMOS器件未发生SEB效应,验证了脉冲激光模拟试验评估SOI LDMOS器件抗SEB能力的可行性。

High-voltage SOI LDMOS(silicon-on-insulator lateral double diffusion metal oxide semiconductor),as the core device of high-voltage integrated circuits, which is widely used in analog switch, gate drive and power management. TCAD simulation software is used to study the single-event sensitive point and device burnout mechanism of high-voltage SOI LDMOS devices. A large amount of ionized charges are generated in the device under the influence of heavy ions, and drifting motion occurs under the action of electric field,thereby inducing the parasitic triode to turn on, as a result, the device has a single event burnout(SEB) effect and fails. A pulsed laser is used to conduct radiation tests on the single-event sensitive points of high-voltage SOI LDMOS devices. The test results showes that the pulsed laser energy is 2 n J, and the high-voltage SOI LDMOS device do not have a SEB effect, which verifies that pulsed laser simulation experiments can evaluate the single-event burnout reinforcement capability of SOI LDMOS devices.