摘要
简述了近年来腐蚀抑制剂在Cu互连化学机械抛光(CMP)中的应用研究进展,分析了包括电化学、光谱学以及密度泛函理论与分子动力学计算等实验和理论手段在抑制机理研究中的应用。展望了Cu互连CMP中腐蚀抑制研究的趋势。
The research progress of various corrosion inhibitors used in the slurry for chemical mechanical polishing(CMP)of Cu interconnects in recent years was summarized.The applications of experimental and theoretical methods including electrochemistry,spectroscopy,density functional theory,and molecular dynamic calculation in the research of corrosion inhibition mechanism were analyzed.The research trends of corrosion inhibition during copper interconnect CMP in the future were proposed.
作者
李伟
檀柏梅
马腾达
纪金伯
闫妹
张诗浩
王亚珍
LI Wei;TAN Baimei;MA Tengda;JI Jinbo;YAN Mei;ZHANG Shihao;WANG Yazhen(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)
出处
《电镀与涂饰》
CAS
北大核心
2021年第21期1637-1645,共9页
Electroplating & Finishing
基金
国家科技重大专项资助项目(2016ZX02301003-004-007)
河北省自然科学基金资助项目(F2018202174)。
关键词
铜互连
化学机械化抛光
腐蚀抑制剂
密度泛函理论
分子动力学
综述
copper interconnection
chemical mechanical polishing
corrosion inhibitor
density functional theory
molecular dynamics
review
