不同钝化工艺SiO_(2)薄膜的辐射缺陷

Radiation Defects of SiO_(2) Films With Different PassivationProcesses

为研究不同钝化工艺栅介质用SiO_(2)薄膜的高能电子辐射缺陷特征,采用能量为1 MeV的高能电子在辐照注量为1×10^(15)e/cm^(2)、5×10^(15)e/cm^(2)和1×10^(16)e/cm^(2)下对三种不同钝化工艺(Ⅰ,700 nm SiN+500 nm PSG;Ⅱ,1.2μm SiN;Ⅲ,700 nm PSG+500 nm SiN)的SiO_(2)薄膜进行了辐照试验。拉曼光谱和X射线光电子能谱结果表明Ⅰ和Ⅲ钝化工艺SiO_(2)薄膜形成了非晶硅及双氧根离子,傅立叶红外光谱结果表明Ⅰ钝化工艺SiO_(2)薄膜形成缺陷结构未知的A_(1)、A_(2)、B_(1)及B_(2)缺陷;Ⅱ钝化工艺SiO_(2)薄膜形成A_(1)、B_(1)、及B_(1)缺陷;Ⅲ钝化工艺SiO_(2)薄膜形成A_(1)、B_(1)'及B_(2)缺陷。

In order to study the characteristic defects of high-energy electron radiation of SiO_(2) films for gate dielectrics with different passivation processes,high-energy electrons with an energy of 1 MeV are used to irradiated the SiO_(2) films with three kinds of passivation processes(Ⅰ,700 nm SiN+500 nm PSG;Ⅱ,1.2μm SiN;Ⅲ,700 nm PSG+500 nm SiN)under irradiation fluences of 1×10^(15) e/cm^(2),5×10^(15) e/cm^(-2),and 1×10^(16) e/cm^(2).The results of Raman spectroscopy and X-ray photoelectron spectroscopy show that the SiO_(2 ) film with Ⅰand Ⅲ passivation process formed amorphous silicon and dioxygen ions.Fourier infrared spectroscopy results show that the SiO_(2) film with Ⅰ passivation process formed A_(1),A_(2),B_(1)and B_(2) defects with unknown defect structure;SiO_(2) film with Ⅱ passivation process formed A_(1),A_(2),B_(1) and B_(1)'defects;SiO_(2) film with Ⅲ Passivation process formed A_(1),B_(1)'and B_(2) defects.