气态氟化氢释放系统

Vapor HF Releasing System

为解决传统SiO_(2)蚀刻工艺中存在的粘连塌陷和蚀刻速率无法精确控制等问题,研究了一种以低压下的气态氟化氢作为腐蚀介质的蚀刻方法,进而介绍了采用这一方法工作的氟化氢释放系统,主要用于在MEMS工艺中对SiO_(2)牺牲层进行腐蚀,从而释放MEMS微结构。该系统的基本工作机理是HF与SiO_(2)反应生成SiF_(4),同时让乙醇参与反应,从而实现了对SiO_(2)蚀刻工艺的优化。实践表明,该系统能有效去除水分,防止粘连和塌陷,更好地控制蚀刻速率,具有广阔的应用前景。

In order to solve the problems of adhesion collapse and the inaccurate control of the etching rate in the traditional SiO_(2) etching process,this paper studies an etching method that uses gaseous hydrogen fluoride under low pressure as the corrosive medium,and then introduces the hydrogen fluoride release system that uses this method.It is mainly used to corrode the SiO_(2) sacrificial layer in the MEMS process to release the MEMS microstructure.The basic working mechanism of the system is that HF reacts with SiO_(2) to generate SiF_(4),while allowing ethanol to participate in the reaction,thereby realizing the optimization of the SiO_(2) etching process.Practice shows that the system can effectively remove water to prevent adhesion and collapse and better control the etching rate,and has broad application prospects.