基于热电耦合激励的TSV三维封装内部缺陷识别方法研究

Research on Internal Defect Recognition Method of TSV 3D Package Based on Thermoelectric Coupling Excitation

由于硅通孔互连(Through Silicon Via,TSV)三维封装内部缺陷深藏于器件及封装内部,采用常规方法很难检测。然而TSV三维封装缺陷在热-电激励的情况下可表现出规则性的外在特征,因此可以通过识别这些外在特征达到对TSV三维封装内部缺陷进行检测的目的。文章利用理论与有限元仿真相结合,对比了正常TSV与典型缺陷TSV的温度分布,发现了可供缺陷识别的显著差异。分析结果表明,在三种典型缺陷中,含缝隙TSV与正常TSV温度分布差异最小;其次为底部空洞TSV,差异最大的为填充缺失TSV。由此可知,通过检测热-电耦合激励下的TSV封装外部温度特征,可实现TSV三维封装互连结构内部缺陷诊断与定位。

Since the internal defects of the through silicon via(TSV)three-dimensional package are hidden deeply inside the device and the package,they are difficult to be detected with conventional methods.However,TSV 3D packaging defects can show regular external characteristics under the condition of thermo-electric excitation.Therefore,TSV 3D packaging internal defect detection can be achieved by identifying these external features.In this paper,the combination of theory and finite element simulation were used to compare the temperature distribution of normal TSV and typical defective TSV,and significant differences were presented for defect identification.The analysis results show that among the three typical defects,the difference in temperature distribution between TSV with gaps and normal TSV is the smallest,the second is TSV with bottom cavity,and the largest difference is TSV with filling missing.It can be seen that by detecting the external temperature characteristics of the TSV package under thermo-electric coupling excitation,the internal defect diagnosis and location of the TSV threedimensional package interconnect structure can be realized.