底部反射增强的GaAs纳米线径向p-i-n结阵列太阳能电池

Solar Cells Based on Bottom-Reflectivity-Enhanced GaAs Radial p-i-n Junction Nanowire Array

提出了一种基于底部反射增强的GaAs纳米线径向p-i-n结阵列的太阳能电池,利用有限差分时域法和有限元方法对其光谱吸收和光伏性能进行了研究。结果表明,将聚合物和衬底之间的SiO2替换为低折射率的MgF2介质层,不仅显著降低了衬底的吸收损耗,还显著提高了纳米线阵列在整个波长范围内对光的吸收率。此外,通过优化i区厚度和纳米线长度,可将太阳能电池的光电转换效率提升至13.9%。该研究为实现低成本、高性能的纳米太阳能电池提供了一条可行途径。

A solar cell based on bottom-reflectivity-enhanced GaAs radial p-i-n junction nanowire array is proposed, and its spectral absorption and photovoltaic performance are studied by finite-different time-domain method and finite element method. The results show that replacing SiO;between the polymer and the substrate with MgF;dielectric layer with low refractive index not only significantly reduces the absorption loss of the substrate, but also significantly improves the optical absorptance of the nanowire array in the whole wavelength range. Moreover, the photoelectric conversion efficiency of the solar cell can be improved to 13.9% by optimizing the thickness of i region and the length of nanowire. This study provides a feasible way to realize low-cost and high-performance nano solar cells.