AlN晶体PVT法生长用坩埚材料技术

Crucible Material Technology for AlN Crystal Growth via PVT Method

宽禁带半导体材料氮化铝(AlN)具有熔点高、临界击穿场强高、高温热稳定性好和耐腐蚀性优等特点,是极其重要的第三代半导体材料。物理气相传输(PVT)法作为被广泛采用的AlN晶体生长技术,其工艺条件与环境要求极为苛刻。耐高温、抗腐蚀、长寿命坩埚已成为大尺寸、高质量AlN晶体生长的技术难题之一。本文介绍AlN晶体PVT法生长的基本原理与过程,分析晶体生长对坩埚材料的性能要求,重点综述了TaC坩埚和TaC涂层石墨坩埚的制备技术。

Aluminum nitride(AlN) is one of the most important third-generation wide-gap semiconductor materials, which has excellent properties such as wide band gap, high melting point, high critical breakdown field strength, high temperature thermal stability and chemical corrosion resistance. As a widely used technology of AlN crystal growth, Physical Vapor Phase Transport method(PVT) has a harsh process conditions and environment. Long life crucible with high temperature resistance and corrosion resistance has become one of the technical problems for a big size,high quality AlN crystal growth. This paper introduces the principle and method of AlN crystals PVT growth process, and analyses the performance requirements of the crucible material for the crystal growth. The preparation techniques of TaC crucible and TaC coated graphite crucible are reviewed.