铂薄膜电阻温度传感器封装研究

Package of Pt Thin Film Resistance Temperature Detector

封装可以保护铂薄膜电阻温度传感器避免机械损伤,减弱薄膜高温下热挥发和团聚现象,提升器件综合性能。设计了一种玻璃釉料/高温陶瓷胶/氧化铝3层复合封装结构。通过合理设计封装结构,选择封装材料,优化封装工艺,调节各层材料热膨胀系数(Coefficient of Thermal Expansion,CTE),减小了热应力,提升了封装可靠性。根据CTE和熔融温度加和性系数计算法则设计玻璃成分,制备玻璃粉末,优化玻璃釉料黏度,制备玻璃釉料。通过对玻璃粉末进行热分析,研究烧结温度对玻璃的影响,设计玻璃釉料烧结曲线,完成铂薄膜电阻封装。实验发现封装层结构致密,封装后电阻响应时间较短,封装提升了电阻温度系数(Temperature Coefficient of Resistance,TCR)和高温(850℃)稳定性。研究表明这种封装结构有利于提升电阻温度传感器的综合性能。该研究对铂薄膜电阻封装具有指导价值。

Package of platinum thin film resistance temperature detector can protect it from mechanical damage,reduce the thermal volatilization and agglomeration at high temperatures,and improve the comprehensive performance of resistor.A three-layer composite package structure of glass glaze/high-temperature ceramic glue/alumina is put forward.Through rational design of packaging structure,selection of packaging materials,optimization of the packaging process and adjustment of coefficient of thermal expansion(CTE)of the materials,thermal stress is decreased,and the packaging reliability is enhanced.Based on the calculation rule of additivity coefficient of CTE and melting temperature,the glass composition is determined.Effect of sintering temperature on the glass is studied and sintering curve of the glass glaze is designed.Platinum thin film resistor package is successfully completed.It is found that the packaging structure is compacted.Resistor after packaging has shortened response time,higher temperature coefficient of resistance(TCR)and high-temperature(850℃)stability.This package structure is beneficial to improve the performance of resistance temperature resistor.The research has guiding value for platinum thin film resistor packaging.