摘要
基于0.18μm SiGe BiCMOS工艺,设计实现了一种低相噪宽带锁相环型频率合成器电路,分析了锁相环型频率合成器中优化相噪和拓宽工作频率的途径和方法。提出了一种低输出噪声参考缓冲电路和高速Delta-sigma调制器结构,改进了MOS管结构的电荷泵电路,采用÷2/3级联可编程分频器结构,实现了宽工作频带。流片测试结果表明,归一化底板相位噪声达到-232.2 dBc/Hz,工作频率可覆盖1~20GHz。
A low phase noise and wideband frequency synthesizer was designed and implemented in a 0.18μm SiGe BiCMOS process.The approaches and methods for optimizing the phase noise and widening the frequency band was analyzed for frequency synthesizer based on PLL type.A low output phase noise reference buffer and a high speed delta-sigma modulator were proposed.,A conventional charge pump was improved to reduce ouput noise.A frequency divider based on÷2/3was used to implement a wideband working frequency.The measurement results showed that the phase noise floor of frequency synthesizer was-232.2dBc/Hz,and the working frequency could cover 1~20GHz.
作者
吴炎辉
陈鹏
李杰
张孝勇
兰庶
刘永光
徐骅
WU Yanhui;CHEN Peng;LI Jie;ZHANG Xiaoyong;LAN Shu;LIU Yongguang;XU Hua(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing400060,P.R.China)
出处
《微电子学》
CAS
北大核心
2021年第5期647-653,共7页
Microelectronics
基金
国家重大科技专项基金资助项目。
