基于引文分析的集成电路领域核心专利识别与分析

Identification and Analysis of Core Patents in IC Field Based on Citation Analysis

近年来,以美国为代表的西方国家在集成电路领域对我国开展频繁、精准、形式多样的封锁与制裁,在目前的大国竞争环境下,未来可能会愈加激烈。本文对集成电路进行了专利计量分析,研究了集成电路专利发展现状;基于引文识别了集成电路领域核心专利,并在此基础上全面分析核心专利的引证时间以及相应的对象与路径。研究表明未来专利数量将会有大幅增长;半导体器件是集成电路的基础和核心技术;应大力发展Fin FET器件、蚀刻导电层、导电层沉积膜和场效应晶体管等前沿技术。研究结果以期为我国调整集成电路发展战略提供参考。

In recent years, the western countries represented by the United States have carried out frequent,accurate and various forms of blockade and sanctions against China in the field of Integrated Circuits. In the current competitive environment of big countries, it may become more intense in the future. In this paper, the patent metrological analysis of Integrated Circuit is carried out, and the development status of Integrated Circuit patent is studied. Based on the citation, the core patents in the field of Integrated Circuit are identified, and the citation time, the corresponding objects and paths of the core patents are comprehensively analyzed. Research shows that the number of patents will increase significantly in the future;semiconductor devices are the foundation and core technology of Integrated Circuits;we should make great efforts to develop advanced technologies such as FinFET devices, etching conductive layer, conductive layer deposition film and field effect transistor. The research results are expected to provide reference for the adjustment of Integrated Circuit development strategy in China.