基于单颗磨粒切削的硅片加工破碎损伤

Silicon wafer breakage damage based on single abrasive cutting

为了探究硅片器件精密磨削加工破碎的损伤规律与演变机制,开展了单颗金刚石磨粒切削单晶硅片的微米划痕实验,分析了硅片边缘有无胶粘包裹作用两种条件下的划痕入口、内部与出口三个区段的破碎损伤形貌特征,并建立了声发射强度、磨削力、切削深度、摩擦系数与破碎损伤之间的内在密切关联。单晶硅破碎损伤随着加载压力或切入深度的增大而越加严重,伴随释放的声发射信号强度增大。单晶硅内部破碎发生的临界阈值条件:载荷约80 mN,切入深度约2μm,声发射强度约8%。胶粘包裹对单晶硅片边缘的增韧效果显著,边缘崩碎发生临界阈值条件为:载荷约800 mN,切入深度约6μm,声发射强度约55%。

To explore the damage law and evolution mechanism of silicon wafers during precision grinding,a single diamond grain cutting experiment of a monocrystalline silicon wafer was carried out.The characteristics of the fracture damage morphology at the entrance of a scratch,inside the scratch,and at the outlet of the scratch were analyzed when the edge of the silicon wafer was covered by an adhesive and when it was not.Thus,the close internal relationship between the AE intensity,grinding force,cutting depth,friction coefficient,and crushing damage was established.With an increase in the loading pressure or penetration depth,the damage on monocrystalline silicon becomes increasingly serious,and the intensity of the acoustic emission signal with release increases.The critical threshold conditions for the internal fragmentation of monocrystalline silicon are as follows:the load,penetration depth,and acoustic emission intensity should be approximately 80 mN,2μm,and 10%,respectively.The toughening effect of the adhesive coating on the edge of the monocrystalline silicon wafer was remarkable.The critical threshold conditions for the edge chipping of monocrystalline silicon are as follows:a load of approximately 800 mN,a penetration depth of approximately 6μm,and an acoustic emission intensity of approximately 55%.