期刊文献+

Influence of Ti_(3)C_(2)T_(x)(MXene)on the generation of dielectric barrier discharge in air 被引量:1

下载PDF
导出
摘要 The formation of homogeneous dielectric barrier discharge(DBD)in air is a key scientific problem and core technical problem to be solved for the application of plasmas.Here,we report the effect of two-dimensional(2D)nanomaterial Ti_(3)C_(2)T_(x)(Tx=-F,-O and/or-OH)on regulating the electrical discharge characteristics.The field emission and weak bound state property of Ti_(3)C_(2)T_(x)can effectively increase the seed electrons and contribute to the generation of atmospheric pressure homogeneous air DBD.The electron avalanche development for the uneven electrode structure is calculated,and the discharge mode transition is modeled.The comparative analyses of discharge phenomena validate the regulation of Ti_(3)C_(2)T_(x)on the discharge characteristics of DBD.The light emission capture and the voltage and current waveforms verify that the transition of Townsend discharge to streamer discharge is effectively inhibited.The optical emission spectra are used to characterize the plasma and confirm that it is in a non-equilibrium state and the gas temperature is at room temperature.This is the first exploration of Ti_(3)C_(2)T_(x)on the regulation of electrical discharge characteristics as far as we know.This work proves the feasibility of Ti_(3)C_(2)T_(x)as a source of seed electrons to form homogeneous DBD,establishing a preliminary foundation for promoting the application of atmospheric pressure non-equilibrium plasma.
作者 崔伟胜 林俏露 李宏博 赵帅 张赟阁 黄逸凡 范姝婷 孙一翎 钱正芳 王任衡 Weisheng CUI;Qiaolu LIN;Hongbo LI;Shuai ZHAO;Yunge ZHANG;Yifan HUANG;Shuting FAN;Yiling SUN;Zhengfang QIAN;Renheng WANG(Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100094,People's Republic of China;Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,People's Republic of China)
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2021年第11期66-73,共8页 等离子体科学和技术(英文版)
基金 support of the Science and Technology Innovation Commission of Shenzhen(Nos.JCYJ20180507181858539 and JCYJ20190808173815205) Guangdong Basic and Applied Basic Research Foundation(No.2019A1515012111) Shenzhen Science and Technology Program(No.KQTD20180412181422399) the National Key R&D Program of China(No.2019YFB2204500) National Natural Science Foundation of China(No.51804199)。
  • 相关文献

同被引文献39

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部