用于1550nm光子检测的InGaAs/InP单光子雪崩二极管的温度相关性

Temperature dependency of InGaAs/InP single photon avalanche diode for 1550nm photons

在越来越多的光子计数应用中,用于近红外光波长领域的单光子探测器受到广泛关注。例如在量子信息处理、量子通信、3D激光测距(LiDAR)、时间分辨光谱等光子计数应用领域。文中设计并展示了用于探测1 550 nm波长光子的InGaAs/InP单光子雪崩二极管(SPAD)。这种SPAD采用分离吸收、过渡、电荷和倍增区域结构(SAGCM),在盖革模下工作时具有单光子灵敏度。SPAD的特性包括随温度范围223~293 K变化的击穿电压、暗计数率、单光子检测效率和后脉冲概率。25μm直径的SPAD显示出一定的温度相关性,击穿电压随温度的变化率约为100 mV/K。当SPAD在盖革模式下温度为223 K工作时,在暗计数率为4.1 kHz,后脉冲概率为3.29%的基础上,对1 550 nm光子实现了21%的单光子探测效率。文中还分析和讨论了SPAD温度相关性的单光子探测效率、暗计数率和后脉冲概率的来源和物理机制。这些机制分析、讨论和计算可以为SPAD的设计和制备提供更多的理论支持和依据。

Single-photon detectors for the near-infrared wavelength region are receiving widespread attention in an increasing number of photon counting applications.In fields such as quantum information processing,quantum communication,3-D laser ranging(Li DAR),time-resolved spectroscopy,etc.An In Ga As/In P single photon avalanche diode(SPAD) was designed and demonstrated to detect 1 550 nm wavelength photons in this paper.The SPAD has a separate absorption,grading,charge and multiplication region structure(SAGCM) with single photon sensitivity when working in Geiger-mode.The characterization of the SPAD include breakdown voltage,dark count rate,single photon detection efficiency and after pulse probability as functions of temperature from223 to 293 K.The 25 μm diameter SPAD shows certain temperature dependency,with breakdown voltage dependence of approximately 100 m V/K.Operating at 223 K and in Geiger-mode,the SPAD achieves a photon detection efficiency of 21% at 1 550 nm with a dark count rate of 4.1 k Hz and a after pulse probability of 3.29%.The source and physical mechanism of the photon detection efficiency,dark count rate and after pulse probability of the SPAD with temperature dependency were also analyzed and discussed.The mechanism analysis,discussion and calculation can provide more theoretical basis and support for the design and fabrication of SPAD.