基于0.35μm CMOS工艺的高温高压LDO芯片设计

Design of high temperature and high voltage LDO using 0.35μm CMOS process

基于X-FAB xa 0.35μm CMOS工艺,首先采用Cascode电流镜和高压管,设计了一种具有高电源抑制比且无需额外提供偏置模块的高温高压基准电路,在输入电压为5.5 V~30 V、工作温度为-55℃~175℃时,可获得稳定的0.9 V基准电压。接着针对负反馈环路的稳定性问题,根据动态零点补偿原理设计了一种新的动态零点补偿电路,使系统在全负载变化范围内保持稳定。同时配合其他过温保护、过压保护、过流保护和逻辑控制等电路模块,完成一款面积为2.8223 mm^(2)的高温高压低压差线性稳压器(LDO)芯片的设计。

In this paper, based on X-FAB xa 0. 35 μm CMOS process, a cascode current mirror and high voltage MOS transistors are used to design a high temperature and high voltage reference circuit with high power supply rejection ratio without additional bias circuit module, and thus, a stable 0. 9 V reference voltage can be obtained when the input voltage is in the range of 5. 5 V~30 V and the operating temperature is in the range of -55 ℃~175 ℃. Then, according to the principle of dynamic zero compensation, a new dynamic zero compensation circuit is designed to make the system to maintain stability in the full load voltage range. At the same time, with the design of other circuit modules such as over-temperature protection, over-voltage protection, over-current pro-tection and logic control circuit modules, a low-dropout linear regulator( LDO) chip with high temperature and high voltage is finally designed, the area of which is 2. 822 3 mm;.