基于GaAs的5G通信手机功率放大器设计

5G mobile phone power amplifier based on GaAs

基于SANAN的HBT工艺,设计了一种用于5G通信频段中4.5~5.0 GHz(N79)的手机功率放大器芯片。该功率放大器的放大电路采用三级放大结构,可获得较高增益;为提高输出功率和优化回波损耗,第二级放大电路与第三级放大电路的级间使用变压器网络进行匹配,将第二级放大电路的一路输出信号转为两路差分信号输出;采用功率合成技术,基板上变压器将第三级的两路差分信号合成为一路信号。该功率放大器采用自适应有源偏置电路技术和双偏置电路技术,能有效提高输出功率的线性度和静态工作点的稳定性。仿真结果表明,在整个N79工作频段内,该功率放大器的回波损耗小于-10 dB,增益为33~34 dBm,输出功率1 dB压缩点为37 dBm,在输出功率为1 dB压缩点处的最高功率附加效率为45%。该功率放大器能得到较高的增益、输出功率和功率附加效率。

Based on the HBT process of SANAN, a mobile phone power amplifier chip suitable for 4.5-5.0 GHz(N79) in the 5G communication frequency band is designed. In order to obtain higher gain and output power, the amplifier circuit of the power amplifier adopts a three-stage amplifying structure. In order to optimize the return loss and increase the gain and output power, a transformer matching is used between the third stage and the second stage. Convert one output signal of the first stage into two differential signals, and the transformer on the substrate synthesizes the two differential signals of the third stage into one signal. The power amplifier adopts adaptive active bias civcuit technology and double bias circuit technology, which can effectively improve the linearity of the output power and the stability of the static working point. The simulation results show that the return loss of the power amplifier is effectively optimized. In the entire N79 operating frequency band, the return loss of the power amplifier is less than-10 dB, the gain is 33-34 dBm, the output power 1 dB compression point is 37 dBm, and the output power is the highest power added efficiency at the 1 dB compression point is 45%.The power amplifier obtains higher gain, higher output power, and higher power-added efficiency.