PdSe_(2)纳米线薄膜/Si异质结近红外集成光电探测器

Near-Infrared Integrated Photodetector Based on PdSe_(2) Nanowires Film/Si Heterojunction

提出了一种PdSe_(2)纳米线(NWs)薄膜/Si异质结近红外集成光电探测器。采用热辅助硒化预先制备Pd NWs的方法合成大面积PdSe_(2)NWs,通过组装和转移NWs可制备包含8×8器件单元的集成光电探测器。光电性能测试结果表明,所设计的器件在200~1300 nm宽波段范围内均有明显的光响应,峰值位于810 nm附近。在零偏压下,器件在810 nm处的响应度(R)为166 mA·W^(-1),当施加-2 V偏压时,R值显著提高至3.24 A·W^(-1)。此外,集成器件呈现出优异的均匀性,64个器件的电流开关比均为60左右。由于良好的性能均匀性,该集成光电探测器可应用于图像传感领域,能可靠地记录近红外光投射的“LASDOP”字母图像,展示了潜在的应用前景。

In this study,a PdSe_(2)nanowires(NWs)film/Si heterojunction-based near-infrared(NIR)integrated photodetector is presented.The large-area PdSe_(2)NWs are synthesized via thermal-assisted selenization of pregrown Pd NWs,and the integrated photodetector with 8×8 device units is obtained by assembly and transfer of the NWs.According to optoelectrical characterization,the as-fabricated device shows visible photoresponse over a broad wavelength range of 200--1300 nm with a peak response at approximately 810 nm.The device exhibits a responsivity(R)of 166 mA·W^(-1) under 810-nm light irradiation at zero bias,which increases to 3.24 A·W^(-1) when applying a-2 V bias voltage.Furthermore,the integrated device exhibits excellent uniformity,and all 64 devices have a current On/Off ratio of approximately 60.Because of its high-performance uniformity,the integrated photodetector can be used as an optical image sensor to accurately record a“LASDOP”pattern projected by NIR light,indicating a promising future use.