干法刻蚀和氢等离子体处理制备增强型p-GaN栅AlGaN/GaN HEMT特性

Characteristics of E-Mode p-GaN Gate AlGaN/GaN HEMTs Prepared by Dry Etching and Hydrogen Plasma Treatment

增强型p-GaN栅AlGaN/GaN高电子迁移率晶体管(HEMT)的栅与源漏之间的沟道特性对器件性能具有重要的影响。在同一晶圆衬底上,采用干法刻蚀和氢等离子体处理栅与源、漏之间的p-GaN,制备增强型p-GaN栅AlGaN/GaN HEMT。对器件静态、动态特性和栅极漏电特性进行研究,采用两种方法制备的器件均具有较高的击穿电压(>850 V@10μA/mm)。通过氢等离子体处理制备的器件的方块电阻较大,导致输出电流密度较低,在动态特性和栅极漏电方面具有明显的优势,氢等离子体处理技术提高了界面态的缺陷激活能,从而实现了较低的栅极反向漏电。

The channel characteristics between the gate and source-drain of E-mode p-GaN gate AlGaN/GaN high electron mobility transistors(HEMTs) have an important effect on the performances of devices.On the same wafer substrate, the p-GaN regions of the gate-source and the gate-drain were treated by dry etching and hydrogen plasma, and the E-mode p-GaN gate AlGaN/GaN HEMTs were prepared.The static and dynamic characteristics and the gate leakage current characteristic of the device were studied.The devices prepared by two methods have high breakdown voltage(>850 V@10 μA/mm).The device prepared by hydrogen plasma treatment has a higher sheet resistance, resulting in a lower output current density, which has obvious advantages in dynamic characterisitic and gate leakage current.The hydrogen plasma treatment technology improves the defect activation energy of the interface state, thus achieving a lower gate reverse leakage current.