2~4GHz连续波120W GaN内匹配功率器件

A2-4GHz Continuous Wave 120W GaN Internally Matched Power Device

基于自主研制的0.25μm高压大栅宽GaN高电子迁移率晶体管(HEMT),采用LC低通谐振匹配技术和宽带功率合成技术,利用大栅宽HEMT有源模型以及键合线、电容和管壳等无源模型进行一体化仿真,匹配电路采用LC匹配网络和λ/4微带线将HEMT阻抗提高至50Ω,最终实现了连续波120 W宽带GaN功率器件。测试结果表明,该器件在36 V漏极工作电压和-2.0 V栅极工作电压下,2~4 GHz频带内连续波输出功率大于120 W,功率附加效率大于46%,功率增益大于9.5 dB,二次谐波抑制度大于20 dBc,杂波抑制度大于70 dBc。

Based on the independently developed 0.25 μm GaN high electron mobility transistor(HEMT) with high voltage and large gate-width, the integrated simulation was carried out by using LC low-pass resonance matching and wideband power combining technologies, large gate-width HEMT active model and passive models including bonding wire, capacitor and package.The matching circuit was designed with the structure of LC matching network and quarter-wavelength micro-strip line so that the impedance of the HEMT was improved to 50 Ω.Finally, a continuous wave 120 W wideband GaN power device was obtained.The test results show that in the frequency range of 2-4 GHz, at a drain operating voltage of 36 V and a gate operating voltage of-2.0 V,the continuous wave output power is greater than 120 W,the power additional efficiency is greater than 46%,the power gain is greater than 9.5 dB,the second harmonic suppression is greater than 20 dBc, and the clutter suppression is greater than 70 dBc.