摘要
Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.
作者
胡朝静
张运祥
林舒平
程世清
何志超
王超杰
周志强
刘芳芳
孙云
刘玮
Zhaojing Hu;Yunxiang Zhang;Shuping Lin;Shiqing Cheng;Zhichao He;Chaojie Wang;Zhiqiang Zhou;Fangfang Liu;Yun Sun;Wei Liu(Institute of Photoelectronic Thin Film Devices and Technology of Nankai University,Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Engineering Research Center of Thin Film Photoelectronic Technology,Ministry of Education,Tianjin 300350,China)
基金
The work was supported by the National Key R&D Program of China(No.2018YFB1500200)
National Natural Science Foundation of China(Nos.61774089 and 61974076)
Natural Science Foundation of Tianjin(No.18JCZDJC31200)。
