摘要
InAs/GaSbⅡ型超晶格因其特殊的能带结构及成熟的材料生长技术,被视为第三代红外探测器的优质材料。本文介绍了长、短波红外探测用的InAs/GaSbⅡ型超晶格探测器结构的光学性质,对比超晶格和衬底的拉曼光谱,指认了结构中存在的主要拉曼振动模式,分波段光致发光谱揭示了器件存在近红外和远红外双波段特性。通过反射光谱、光电流谱以及宽波段红外透射光谱,表征了短波红外和长波红外的明显吸收特性,合理解释了基于InAs/GaSbⅡ型结构在近、中、远红外波段的探测功能。研究结果可为研制基于InAs/GaSbⅡ型超晶格的双/多/宽波段红外探测器的结构设计和机理分析提供指导。
InAs/GaSb type-Ⅱ superlattices(T2SLs)are considered as high-quality material for the third-generation infrared detectors due to the special energy band structure and mature material growth technology.This paper introduces the optical properties of InAs/GaSb T2SLs for long-wave and short-wave infrared detection.The Raman vibration modes in the superlattice detector structure are obtained by Raman spectra at different layers,and the sub-band photoluminescence spectrum reveals that the device has dual band characteristics of near-infrared and far-infrared.The obvious absorption characteristics of short wave infrared and long wave infrared are characterized by reflection spectrum,photocurrent spectrum and wide band infrared transmission spectrum.The detection mechanism in the near,middle and far infrared bands is reasonably interpreted.The investigation can provide reference for the structural design and mechanism analysis of the development of dual/multi/broadband infrared detectors based on InAs/GaSb T2SLs.
作者
李红凯
李墨
董尚威
洪进
陈晔
敬承斌
越方禹
褚君浩
Li Hongkai;Li Mo;Dong Shangwei;Hong Jin;Chen Ye;Jing Chengbin;Yue Fangyu;Chu Junhao(Key Laboratory of Polar Materials and Devices,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China;China Airborne Missile Academy,Luoyang 471009,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
出处
《航空兵器》
CSCD
北大核心
2021年第6期95-99,共5页
Aero Weaponry
基金
国家自然科学基金项目(61874043,61790583,61874045,61775060)
国家重大研发计划项目(2016YFB0501604)
航空科学基金项目(201824X8001)。
