摘要
The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore,the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3,-0.1] V/A and [0.1, 0.3] V/A and change into metal when the electric field intensity is equal to or higher than0.4 V/A. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.
作者
谭兴毅
丁林杰
任达华
Xing-Yi Tan;Lin-Jie Ding;Da-Hua Ren(Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China;School of Information Engineering,Hubei Minzu University,Enshi 445000,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.11864011)
the Youth Project of Scientific and Technological Research Program of Chongqing Education Commission,China(Grant Nos.KJQN202001207 and KJQN202101204)
the Fund from the Educational Commission of Hubei Province,China(Grant No.T201914)。