微波退火条件下镍和锗锡合金反应的形貌研究

Morphology research of Ni-GeSn reaction under microwave annealing

为了研究高质量镍锗锡薄膜的制备方法,在不同微波退火温度下进行了锗锡合金与镍的固相反应。借助四探针方块电阻测试、原子力显微镜、透射电子显微镜、能量色散X射线光谱等表征手段,分析了在微波退火条件下100~350℃所生成镍锗锡化物样品的形貌。研究结果表明:镍锗锡化物的表层电阻、表面粗糙度及薄膜质量与微波退火温度紧密相关,在250℃退火条件下得到了连续平整的镍锗锡薄膜,锡偏析在镍锗锡/锗锡的界面;在350℃退火条件下,薄膜的连续性遭到破坏,表面粗糙度变大,锡偏析在样品的表面和镍锗锡/锗锡的界面。与常规快速热退火方式相比,本文采用的微波退火方式,可在相对更低的温度得到高质量的镍锗锡薄膜,降低了镍与锗锡衬底反应所需的热预算。

In order to study the morphology of NiGeSn under microwave annealing conditions,Ni-GeSn reaction was studied under different microwave annealing(MWA)temperatures.The NiGeSn morphologies were characterized by the four-point probe method,atomic force microscopy(AFM),the cross-section transmission electron microscopy(XTEM)and energy dispersive X-ray spectrometer(EDX)techniques under MWA temperature of 100~350℃.It is shown that the sheet resistance,RMS values and crystal quality of NiGeSn film had a close relation with the annealing temperatures.The smooth and uniform NiGeSn film cloud be formed at 250℃and the Sn atoms segregated at the NiGeSn/GeSn interface.At 350℃,the continuous NiGeSn film was destroyed and the NiGeSn surface became very rough.Sn atoms segregated on the NiGeSn surface and the NiGeSn/GeSn interface.Compared with rapid thermal annealing(RTA),microwave annealing reduces the thermal budget and can form a flat NiGeSn film at a relative low temperature.