摘要
Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications,which are becoming increasingly important for power electronics nowadays.Among them,AgNbO_(3) based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates.However,most of the AgNbO_(3) based ceramics suffers from low dielectric breakdown strength(Eb).The limitation of low Eb is broken to some extent in this work.Here,AgNbO_(3) epitaxial films were fabricated by pulsed laser deposition,which possess high Eb of 624 kV/cm.The(001)AgNbO_(3) epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm.A recoverable energy density of 5.8 J/cm^(3) and an energy efficiency of 55.8%are obtained at 600 kV/cm,which demonstrates the great promise of the AgNbO_(3) film for energy storage applications.
基金
supported by the National Natural Science Foundation of China(No.51802068 and No.52073144)
Advanced Talents Incubation Program of the Hebei University,China(No.801260201180)
the Natural Science Foundation of Jiangsu Province,China(No.BK20201301)
the State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF202005)
the Basic Scientific Research Program of National Institute of Metrology(No.AKY1949).
