摘要
介绍了辉光放电发射光谱仪(GDOES)的发展和应用领域,以及测量深度谱定量分析的MRI模型。主要对单晶硅表面自然氧化的SiO2层、单层硫脲分子和Mo/B4C/Si多层光学膜进行了GDOES高分辨率深度谱的定量分析,由此获得了膜层结构、界面粗糙度及元素溅射速率等定量信息。同时,对Mo/Si多层膜GDOES与SMIS深度分辨率进行了比较,最后展望了GDOES和MRI模型的发展趋势。
The development and application of glow discharge emission spectrometry(GDOES),and the MRI model for quantitative sputter depth profiling are introduced.The measured high-resolution GDOES depth profiles of SiO_(2) layer naturally grown on the substrates,single thiourea molecular layer and optical multilayer of Mo/B4 C/Si are quantitatively evaluated.The layered structure,interface roughness and sputtering rate are obtained accordingly.Meanwhile,the depth resolution values of the GDOES and SMIS depth profiles of Mo/Si multilayers are compared.Finally,the future development of GDOES and the MRI model are prospected.
作者
杨浩
马泽钦
蒋洁
李镇舟
宋一兵
王江涌
徐从康
YANG Hao;MA Zeqin;JIANG Jie;LI Zhenzhou;SONG Yibing;WANG Jiangyong;XU Congkang(Department of Physics,Shantou University,Shantou 515063,China;Department of Chemistry,Shantou University,Shantou 515063,China;Department of Mathematics,Shantou University,Shantou 515063,China;Center of Semiconductor Materials and Devices,Shantou University,Shantou 515063,China)
出处
《材料研究与应用》
CAS
2021年第5期474-485,I0002,共13页
Materials Research and Application
基金
国家自然科学基金项目(11274218,51511140420)
科技部政府间国际合作交流项目(9-11,10-4)
广东省科技计划项目(2017A010103021)。
