摘要
通过优化倍增层的厚度,研究了InAlAs/InGaAs雪崩光电二极管增益带宽积和暗电流之间的关系。利用仿真计算得出200 nm厚的倍增层能够改善增益带宽积并降低暗电流。制成的InAlAs/InGaAs雪崩光电二极管性能优异,与计算趋势一致。在获得0.85 A/W的高响应和155 GHz的增益带宽积的同时,器件暗电流低于19 nA。这项研究对雪崩光电二极管在未来高速传输的应用具有重要意义。
In this paper,the trade-off between gain-bandwidth product(GBP)and dark current of an InAlAs/InGaAs avalanche photodiode(APD)was studied by optimizing multiplication layer.An optimized multiplication layer with 200 nm was proposed to improve the GBP and reduce the dark current.The fabricated InAlAs/InGaAs APD shows an excellent performance which is consistent with the calculated results.A high responsivity of 0.85 A/W(M=1)at 1.55μm and a high GBP of 155 GHz was achieved,whereas the dark current is as low as 19 nA at 0.9 Vb.This study is significant to the future high-speed transmission application of the avalanche photodiodes.
作者
顾宇强
谭明
吴渊渊
卢建娅
李雪飞
陆书龙
GU Yu-Qiang;TAN Ming;WU Yuan-Yuan;LU Jian-Ya;LI Xue-Fei;LU Shu-Long(Institute of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2021年第6期715-720,共6页
Journal of Infrared and Millimeter Waves
基金
Supported by the National High Technology Research and Development Program of China(2018YFB2003305)
the Key R&D Program of Jiangsu Province(BE2018005)
the Science and Technology Service Network Initiative of the Chinese Academy of Sciences(KFJ-STS-ZDTP-086)
the Support From SINANO(Y8AAQ11003)
Natural Science Foundation of Jiangsu Province(BK20180252)。
关键词
雪崩光电二极管
增益带宽积
暗电流
avalanche photodiodes(APDs)
gain-bandwidth product(GBP)
dark current
