摘要
为了获得高功率、窄线宽和近衍射极限输出的半导体激光器,采用高阶光栅(high order Bragg gratings,HOBGs)和主控振荡功率放大器(Master Oscillator Power-Amplifier,MOPA)结构,成功研制出一种980 nm波段的HOBGs-MOPA半导体激光器。该激光器采用周期为11.37μm的高阶光栅进行光模式选择,通过锥角为6°的锥形波导将单模激光功率放大,实现了输出功率2.8 W,3 dB光谱线宽31 pm,光束质量因子M2为2.51的窄线宽激光输出。
In order to obtain high power,narrow line width and near diffraction limit output semiconductor laser diodes,the high order Bragg gratings(HOBGs)and master oscillator power-amplifier(MOPA)have been fabricated in the waveguide of HOBGs-MOPA laser diodes with an emission wavelength of 980 nm.The longitudinal mode of HOBGs-MOPA was selected by the HOBGs with a period of 11.37 μm.The single-mode optical power is amplified by a tapered waveguide with an angle of 6°.In this paper,we present a single mode laser diode with continuous wave power 2.8 W at a 3 dB line-width of 31 pm.The laser diode operates in a close to diffraction-limited optical mode(M2=2.51,laterally).
作者
郎兴凯
贾鹏
秦莉
陈泳屹
梁磊
雷宇鑫
宋悦
邱橙
王玉冰
宁永强
王立军
LANG Xing-Kai;JIA Peng;QIN Li;CHEN Yong-Yi;LIANG Lei;LEI Yu-Xin;SONG Yue;QIU Cheng;WANG Yu-Bing;NING Yong-Qiang;WANG Li-Jun(State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Daheng College,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2021年第6期721-724,共4页
Journal of Infrared and Millimeter Waves
基金
国家重点基础研究发展计划(2018YFB0504600,2017YFB0405100)
国家自然科学基金(61904179,62004194)
吉林省科技发展计划项目(20200401062GX)。
关键词
半导体激光器
大功率
窄线宽
高阶光栅
semiconductor laser diode
high power
narrow line-width
high order Bragg gratings
