0.825 THz砷化镓单片集成二次谐波混频器(英文)

0.825 THz Ga As monolithic integrated sub-harmonic mixer

基于国内的GaAs单片集成电路产线,研制了一款中心频率在0.825 THz的二次谐波单片混频器。针对肖特基二极管在太赫兹频段的高频效应详细分析了反向并联肖特基二极管的寄生参数以完善单片电路的设计。单片电路集成度高和装配误差小的特性更适用于太赫兹频段器件的设计。梁氏引线形式电路设计既可以降低介质基板带来的损耗,减小安装的位置偏移。实测结果表明,0.825 THz单片混频器最佳单边带的插损值为28 dB,0.81到0.84 THz频率范围内插损小于33 dB。

A sub-harmonic monolithic mixer with a center frequency of 0.825 THz is developed based on GaAs monolithic microwave integrated circuit technology.The parasitic parameters of the anti-parallel Schottky diode at the terahertz frequency are analyzed to improve the circuit design.The monolithic circuit is suitable for terahertz devices with the characteristics of high integration and little fabrication deviation.Meanwhile,the beamlead circuit is used to reduce the loss of substrate and installation position offset.Measured results show that the singlesideband(SSB)conversion loss of the mixer is lower than 33 dB in the frequency range 0.81~0.84 THz,and the minimum SSB conversion loss is 28 dB.