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物联网中的2.4GHz低功耗功率放大器设计

Design of 2.4GHz Low Power Amplifier in Internet of Things
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摘要 阐述基于Global Foundries 22FDX(22nm SOI)PDK技术,结合IoT应用的背景,设计了工作于2.4GHz的Class-E低压低功耗功率放大器。采用差分输入、单端输出的两级放大结构,该放大器在低于8mW总功耗下的输出功率范围为-16.5~4.9dBm,达到最大输出功率时PAE为41.5%。整体最大功耗7.9mW,输出匹配S22<-10dB,稳定性Kf>1,B1f>0,谐波功率<-46dBm,工作温度范围-40~125℃。 Based on global foundries 22 FDX(22 nm SOI) PDK technology and the background of Io T application, a class-E low-voltage low-power amplifier working at 2.4 GHz is designed. The twostage amplifier structure with differential input and single end output is adopted. The output power range of the amplifier is-16.5~4.9 d Bm under the total power consumption of less than 8 m W, and the PAE is 41.5% when reaching the maximum output power. The overall maximum power consumption is 7.9 m W, the output matching is S22<-10 d B, the stability is KF>1, B1 F>0, the harmonic power is <-46 d Bm, and the operating temperature range is-40~125 ℃.
作者 赵康杰 ZHAO Kangjie(Shanghai Electric Power University,Shanghai 201306,China)
机构地区 上海电力大学
出处 《集成电路应用》 2021年第12期10-12,共3页 Application of IC
关键词 CMOS射频 功率放大器 CLASS-E 片上变压器 低功耗 CMOS RF power amplifier Class-E on-chip transformer low power consumption
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