"双碳"目标下三代半导体的发展分析

Development Analysis of Third Generation Semiconductor under the Goal of Dual Carbon

第三代半导体是以碳化硅和氮化镓为代表,具备高频率、高效率、高功率、耐高压、耐高温、高导热等优越性能,是新一代移动通信、新能源汽车、高速轨道列车、能源互联网产业自主创新发展和转型升级的重点核心材料。通过大力发展第三代半导体,尤其是目前大量应用的碳化硅和氮化镓,以及探索新一代半导体材料,对支撑碳达峰、碳中和意义重大。

The third generation semiconductor is a delegate with silicon carbide and gallium nitride.Its high frequency,high efficiency,high power,high pressure resistance,high temperature resistance,high thermal conductivity and other superior performance,is a new generation of mobile communications,new energy vehicles,high-speed railway,energy independent innovation development of the internet industry and the focus of the transformation and upgrading of core material.Through developing the third generation of semiconductor,in particular,GaN and SiC,which are widely used at present,as well as exploring a new generation of semiconductor materials,it is of great significance to support carbon peak and carbon neutrality.