高导热氮化硅覆铜板在功率器件中的应用可靠性

Application Reliability of High Thermal Conductivity Si_(3)N_(4) Copper Clad Laminate in Power Devices

采用活性金属钎焊技术制备Cu/Si_(3)N_(4)/Cu陶瓷覆铜板,在-65~150℃温度条件下经历500次温度循环后,基板无裂纹、翘起、起皮等缺陷。对基板进行微电子组装和可靠性试验,基板与芯片的焊接浸润性较好,焊接强度及长期可靠性满足标准要求。基板粘接元器件后无渗胶现象,且环境组考核合格。在基板上键合4种常用规格的铝丝,键合后和N_(2)环境中热存试验后的键合强度均符合标准要求。研究结果表明,高导热氮化硅覆铜板满足功率器件的高可靠性应用需求。

The Cu/Si_(3)N_(4)/Cu ceramic copper clad laminate is prepared by active metal brazing.After 500 temperature cycles at-65~150℃,the substrate has no defects such as cracks,warping,and peeling.Microelectronics assembly and reliability tests are performed on the substrate,the substrate and the chip have good soldering wettability,and the soldering strength and long-term reliability meet the standard requirements.After the chip components are bonded to the substrate,there is no glue leakage and the environmental assessment is qualified.Four specifications of commonly used aluminum wires are bonded on the substrate,and then the heat storage test in the N_(2) environment are performed,the bond strength all meet the standard assessment requirements.The results show that the high thermal conductivity Si_(3)N_(4) copper clad laminate meets the high reliability requirements of power device applications.