聚合物薄膜的大气压微等离子体射流无掩膜刻蚀工艺

Unmasked Etching Process of Atmospheric Pressure Micro-plasma Jet of Polymer Films

为优化束斑直径在微米级的大气压微等离子体射流刻蚀工艺,自制搭建一种结构简单、操作方便的大气压微等离子体射流装置,以典型聚合物parylene-C薄膜为对象,研究大气压微等离子体射流处理parylene-C薄膜的刻蚀工艺,分析O2流量、工作电压、工作间距和刻蚀时间等工艺参数对刻蚀线宽和刻蚀深度的影响。结果表明:增大O_(2)流量、工作电压、工作间距及刻蚀时间均能增大刻蚀线宽和刻蚀深度;持续增大上述工艺参数,刻蚀线宽和刻蚀深度增加不明显,甚至减小;工作电压和工作间距对parylene-C薄膜刻蚀效果的影响较大,在刻蚀过程中起关键作用,通过调整这两个参数可实现聚合物刻蚀过程的可控调节。

In order to optimize the atmospheric pressure micro-plasma jet etching process with the beam spo diameter in the micron level,an atmospheric pressure micro-plasma jet device with simple structure and convenien operation was built.Taking typical polymer parylene-C film as the research object,the etching process of parylene-C film treated by atmospheric pressure micro-plasma jet was studied,and the influences of process parameters such as O_(2) flow,working voltage,working distance and etching time on the etching line width and etching depth were analyzed.The results show that the etching line width and etching depth can be increased by increasing the O_(2) flow,working voltage,working distance and etching time.With the continuous increase of the above process parameters,the etching line width and etching depth do not increase significantly,even decrease The working voltage and working distance have a great influence on the etching effect of parylene-C film,and play a key role in the etching process,and the controllable adjustment of the polymer etching process can be realized by adjusting these two parameters.