摘要
应用脉冲激光沉积法(PLD)制备ZnO基稀磁半导体薄膜,主要研究各试验条件对薄膜结晶效果的影响,通过正交试验确定最佳试验条件为:衬底温度500℃,氧压0.1Pa,激光能量200mJ/次,为ZnO薄膜的深加工和进一步开发利用奠定基础。
The pulsed laser deposition(PLD)method is used to prepare ZnO-based diluted magnetic semiconductor films.The main research is to study the influence of various experimental conditions on the crystallization effect of the film.The best experimental conditions are determined by orthogonal experiments:substrate temperature 500℃,oxygen pressure 0.1Pa,laser energy 200mJ·times^(-1),lays the foundation for the deep processing and further development and utilization of ZnO thin films.
作者
闫碧莹
张艳君
Yan Bi-ying;Zhang Yan-jun
出处
《化工设计通讯》
CAS
2022年第1期117-119,122,共4页
Chemical Engineering Design Communications
基金
内蒙古自治区教育厅自然科学项目(NJZC17576)。
关键词
氧化锌
稀磁半导体
脉冲激光沉积法
zinc oxide
dilute magnetic semiconductor
pulsed laser deposition
