倏逝场照明的集成零模波导纳米孔芯片

Integrated zero-mode waveguide nanopore chip illuminated by evanescent field

为了降低零模波导照明系统的成本、缩小尺寸,设计并完成衍射光栅、光波导以及零模波导的片上集成,并对集成化芯片的微纳结构及性能进行验证。采用时域有限差分法对集成化芯片进行了仿真设计,基于微纳加工手段制备出片上衍射光栅、光波导以及零模波导阵列结构,对微观结构进行表征,并借助荧光微球对芯片的性能进行验证。通过荧光微球测试,制备的集成化芯片可以实现荧光微球的有效激发;通过微观结构表征,衍射光栅周期为(352.8±2.6)nm,齿宽为(155.3±2.4)nm,刻蚀深度为(67.8±3.5)nm;光波导芯层的宽度为(504.05±10.35)nm,高度为(184.9±8.9)nm;零模波导直径为(200.2±6.4)nm,深度为(301.3±7.6)nm,满足设计要求。芯片尺寸为22 mm×22 mm,最小线宽为155 nm,通过8个衍射光栅、约1000条光波导以及数十万个零模波导阵列结构的片上集成,为零模波导的照明提供了一种紧凑且有效的解决方案。

To reduce the cost and size of zero-mode waveguide lighting systems,the on-chip integration of diffraction gratings,optical waveguides,and zero-mode waveguides was designed and completed,and the micro-nanostructure and performance of the integrated chip were verified.The FDTD method was used to simulate and design the integrated chip.The on-chip diffraction grating,optical waveguide,and zeromode waveguide array were fabricated by micro-nano machining methods,and the micro-nanostructure was characterized.A fluorescent microsphere test was performed to verify the performance of the chip.The test shows that the prepared integrated chip can realize the effective excitation of the fluorescent microsphere.The micro-nanostructure characterization shows that the diffraction grating period,tooth width,and etching depth are(352.8±2.6)nm,(155.3±2.4)nm,and(67.8±3.5)nm,respectively.The width and height of the waveguide core layer are(504.05±10.35)nm and(184.9±8.9)nm,respectively.The diameter and depth of the zero-mode waveguide are(200.2±6.4)nm and(301.3±7.6)nm,respectively,which meet the design requirements.The 22 mm×22 mm chip,with a minimum linewidth of 155 nm,provides a compact and efficient solution for zero-mode waveguide illumination through the onchip integration of eight diffraction gratings,approximately 1000 optical waveguides,and hundreds of thousands of zero-mode waveguide array structures.