MoS_(2)的摩擦起电及充电特性研究

Study on triboelectrification and charging characteristics of MoS_(2)

二维二硫化钼(2D MoS_(2))由于其优越的电学、光学和压电性能,使其在未来电子器件领域被广泛关注.该文利用AFM接触模式和SKPM,在纳米尺度上,测试CVD制备多层MoS_(2)的隧道摩擦起电和充电特性.通过AFM接触模式,在75 nN的法向载荷力下,用Pt导电探针摩擦MoS_(2)样品的1μm×1μm正方形区域,同时使硅基底接地.然后通过SKPM,对以摩擦区域为中心的5μm×5μm正方形区域的接触电势进行成像.最后以上述方式,依次在A、B、C区域进行摩擦起电测试.研究结果表明:MoS_(2)不仅具有摩擦起电特性,而且表现出摩擦其他区域,可以对初始区域充电的现象.因此,可以利用MoS_(2)的摩擦起电特性和充电现象,指导构建一类新的基于2D MoS_(2)纳米电子器件和摩擦电子学功能器件的应用.

Two-dimensional molybdenum disulfide(2D MoS_(2))has attracted extensive attention in the field of future electronic devices due to its excellent electrical,optical and piezoelectric properties.In this paper,the tunneling tribological charging characteristics of multilayer MoS_(2) prepared by CVD are tested on the nanometer scale by AFM contact mode and SKPM.The tip of Pt conductive probe was used to rub the 1μm×1μm square region of MoS_(2) sample under normal loading force of 75 nN by AFM contact mode,and the underlying Si was grounded.SKPM imagines the pin-sample contact potential difference in a square area of 5μm×5μm centered on the friction region.Finally,the above methods were tested in area A,B and C.The results show that MoS_(2) can not only start the charge by friction but also realize the initial charge by rubbing other areas.Therefore,the triboelectric properties and charging phenomena of MoS_(2) can guide the construction of a new class of 2D MoS_(2) nano-electronic devices.