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贵金属超细丝材截面的EBSD与三维重构表征

EBSD and 3D reconstruction characterization of precious metal ultrafine wire sections
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摘要 贵金属超细丝材常用于精密电子功能器件的关键位置,但由于其加工成品尺寸微细传统技术无法准确表征超细丝材的微观精细结构。采用聚焦离子束-电子背散射衍射(FIB-EBSD)联用的超细丝材截面制样与表征方法,精确表征出了4种不同材质贵金属超细丝材的晶粒、取向、织构以及晶界等微观结构信息;而3D EBSD三维重构技术将微观结构分析实现为3D动态过程,更加直观地反应出超细丝材的真实微观结构信息。 Precious metal ultra-fine wires are critical components in precision electronic functional devices.However, due to their ultrafine sizes, traditional techniques cannot accurately characterize the microstructures of ultrafine wires. By using a combination technique of a focused ion beam and an electron backscatter diffraction method,(FIB-EBSD) four precious metal ultrafine wires sections were prepared, and their microstructures of grain orientation, texture and grain boundary were accurately characterized. In addition, the 3D reconstruction technology(3D EBSD) realized the analysis of microstructures as a 3D dynamic process, which more intuitively reflects the true microstructure information of ultrafine wires.
作者 袁晓虹 王一晴 周文艳 甘建壮 陈国华 康菲菲 毛端 毕勤嵩 YUAN Xiao-hong;WANG Yi-qing;ZHOU Wen-yan;GAN Jian-zhuang;CHEN Guo-hua;KANG Fei-fei;MAO Duan;BI Qin-song(Sino-Platinum Metals Co.Ltd.,Kunming Institute of Precious Metals,Kunming 650106,China;Guiyan Testing Technology(Yunnan)Co.Ltd.,Kunming 650106,China)
出处 《贵金属》 CAS 北大核心 2021年第3期64-70,共7页 Precious Metals
基金 云南省刘志权专家工作站(202005AF150045) 云南省基础研究计划青年基金(202001AU070082) 国家重点研发计划(2017YFB0305405)。
关键词 金属材料 超细丝材 扫描电子显微镜 聚焦离子束 电子背散射衍射 三维重构 metal materials ultrafine wire SEM FIB EBSD 3D tomography
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  • 1刘庆.电子背散射衍射技术及其在材料科学中的应用[J].中国体视学与图像分析,2005,10(4):205-210. 被引量:57
  • 2陈绍楷,李晴宇,苗壮,许飞.电子背散射衍射(EBSD)及其在材料研究中的应用[J].稀有金属材料与工程,2006,35(3):500-504. 被引量:48
  • 3高珊,郑磊.高强度高韧性X80管线钢的研制与应用[J].宝钢技术,2007(2):1-4. 被引量:12
  • 4陈超,潘春旭,傅强.采用显微硬度压痕法测量微区残余应力[J].机械工程材料,2007,31(1):8-11. 被引量:15
  • 5Wright S I, Nowell M M. EBSD image quality mapping [J]. Microscopy and Microanlysis, 2006, 12( 1 ) : 72 - 84.
  • 6Keller R R, Rosbko A, Geiss R H, Bertness K A, Quinn T P. EBSD Measurement of strains in GaAs due to oxidation of buried AIGaAs layers [ J ]. Microelectronic Engineering, 2004, 75 (1). 96- 102.
  • 7Luo J F, Ji Y, Zhong T X, Zhang Y Q. EBSD measurements of elastic strain fields in a GaN/sapphire structure [ J]. Microelectronics Reliability, 2006, 46 (1): 178-182.
  • 8FanL X, Guo D L, Ren F, Xiao X H. The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure[ J]. 2007, 16( 11 ) : 7301 -7305.
  • 9Wilkinson A J. Measurement Strains Using Electron Backscatter Diffraction [ M ]. Electron Backscatter Diffraction in Materials Science. New York: Kluwer Academic, 2000. 231 - 246.
  • 10Troost K Z, van der Sluis P, Gravesteijin D J. Microscale elastic-strain determination by backscatter Kikuchi diffraction in the scanning electron microscope [J]. Applied Physics Letter, 1993, 62(10): 1110- 1112.

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