二维三氧化钨纳米结构的合成及其在光电探测器中的应用

Synthesis of Two-Dimensional Tungsten Trioxide(WO_(3))Nanostructure and Its Application in Photodetectors

三氧化钨(WO_(3))是制造晶体管和光电探测器的理想材料,虽然在WO_(3)纳米结构的生长方面已经完成了一些工作,但是制造足够长的理想型纳米线仍然是一个挑战。在众多的合成方法中,作者选择了化学气相沉积(CVD)方法合成WO_(3)纳米线,并对其在光电传感器中的应用进行了研究。影响WO_(3)纳米线成品率的主要因素是前体材料温度、基片位置、载气流速和生长持续时间。在合适的生长条件下生长的纳米线长度最长约为100μm。这些WO_(3)纳米线可用来制造高性能的光电探测器,WO_(3)光电探测器具有灵敏度高、响应速度快、模块微型化等优良的器件性能,表明二维WO_(3)纳米线在光电探测器的制造中具有很大的优势。

Tungsten oxide(WO_(3))is ideal for manufacturing transistors and photodetectors.Although some work has been done on growth of WO_(3)nanostructures,making ideal long enough nanowires is still a challenge.Among many synthesis methods,the author chose to use chemical vapor deposition(CVD)to synthesize WO_(3)nanowires and study their application to photoelectric sensors.The main factors affecting WO_(3)nanowires products are precursor material temperature,substrate position,carrier gas flow rate and growth duration time.The greatest length of nanowires grown under appropriate growth condition is approximately 100μm.WO_(3)nanowires can be used for fabricating high-performance photodetectors.WO_(3)photodetector has excellent device performance including high sensitivity,fast response speed and module miniaturization,which indicate that two-dimensional WO_(3)nanowires have great advantages in the manufacture of photodetectors.