摘要
以一种高压电源的前置稳压电路作为研究对象,重点分析稳压控制电路的抗中子抗辐射能力。对导致中子辐照前后输出电压变化量的因素进行分析,并对关键元器件晶体管进行辐照效应分析和试验验证,提出了晶体管优化和采用达林顿晶体管结构2种加固措施。通过电路仿真和制作样机,得到在1 Me V等效中子2×10;n/cm;中子注量后的仿真和实测结果与理论分析值相吻合,验证了抗辐射加固措施的有效性。
A radiation hardening pre-regulated high voltage power supply is studied.The factors affecting the output voltage before and after neutron irradiation are analyzed.The radiation effect of key component transistor is analyzed and verified by experiments.Two optimization measures for static work point optimization and Darlinton transistor structure are put forward.The validation prototype is fabricated,and the experimental results after 1 Me V equivalent neutron 2×10;n/cm;flux coincide with the theoretical analysis values,which confirms the effectiveness of radiation hardening measures.
作者
程铭
余海生
付鹏
谢先进
CHENG Ming;YU Haisheng;FU Peng;XIE Xianjin(Sichuan Institute of Solid State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,China)
出处
《太赫兹科学与电子信息学报》
2021年第6期1134-1137,共4页
Journal of Terahertz Science and Electronic Information Technology
基金
装备预先研究资助项目。
关键词
高压电源
前置稳压
晶体管
达林顿
中子辐射
high voltage power supply
pre-regulated
transistor
Darlinton
neutron radiation
