CdS薄膜/p-Si异质结的制备及其光伏性能研究

The Preparation of CdS Thin Film/p-Si Heterojunction and Its Photovoltaic Properties

采用喷雾热解法在p型单晶硅(Si)上制备了硫化镉(CdS)薄膜,分支结构的金属Au作为正电极、金属铟作为背电极构成CdS薄膜/Si异质结光电器件.采用X-射线衍射(XRD)和原子力显微镜(AFM)对样品的晶体微结构及表面形貌进行表征,并通过紫外可见光谱研究CdS薄膜的光学吸收性能.最后,通过数字源表Keithley2400和高精度数字电桥TH2828测试异质结器件在不同光照强度(10、20、30、75、100、150 mW·cm^(-2))下的伏安特性、光电导率和交流阻抗.

CdS(CdS)thin films are prepared on p-type mono-crystalline silicon(Si)by spray pyrolysis.The CdS thin films/Si heterojunction photoelectric devices are fabricated by branching metal Au as the positive electrode and indium as the back electrode.The crystal microstructure and surface morphology of the samples are characterized by X-ray diffraction(XRD)and atomic force microscopy(AFM).The optical absorption properties of CdS thin films are studied by UV-Vis spectroscopy.The voltage-current characteristics,photoconductivity and AC impedance of heterojunction under different light intensities(10,20,30,70,100,150 mW·cm^(-2))are measured by digital source-meter Keithley2400 and high precision digital bridge TH2828.