期刊文献+

Elasticity-based-exfoliability measure for high-throughput computational exfoliation of two-dimensional materials

原文传递
导出
摘要 Two-dimensional(2D)materials are promising candidates for uses in next-generation electronic and optoelectronic devices.However,only a few high-quality 2D materials have been mechanically exfoliated to date.One of the critical issues is that the exfoliability of 2D materials from their bulk precursors is unknown.To assess the exfoliability of potential 2D materials from their bulk counterparts,we derived an elasticity-based-exfoliability measure based on an exfoliation mechanics model.The proposed measure has a clear physical meaning and is universally applicable to all material systems.We used this measure to calculate the exfoliability of 10,812 crystals having a first-principles calculated elastic tensor.By setting the threshold values for easy and potential exfoliation based on already-exfoliated materials,we predicted 58 easily exfoliable bulk crystals and 90 potentially exfoliable bulk crystals for 2D materials.As evidence,a topology-based algorithm indicates that there is no interlayer bondingtopology for 93%predicted exfoliable bulk crystals,and the analysis on packing ratios shows that 99%predicted exfoliable bulk crystals exhibit a relatively low packing ratio value.Moreover,literature survey shows that 34 predicted exfoliable bulk crystals have been experimentally exfoliated into 2D materials.In addition,the characteristics of these predicted 2D materials were discussed for practical use of such materials.
出处 《npj Computational Materials》 SCIE EI CSCD 2021年第1期1941-1948,共8页 计算材料学(英文)
基金 This work was supported by the National Natural Science Foundation of China(12172261 and 11902225) XJ.acknowledges the technical assistance from Xiaoang Yuan and Boxue Wang.The numerical calculations in this work have been performed on a supercomputing system in the Supercomputing Center of Wuhan University.
  • 相关文献

参考文献3

二级参考文献14

  • 1K. S. Novoselov,Z. Jiang,Y. Zhang,S. V. Morozov,H. L. Stormer,U. Zeitler,J. C. Maan,G. S. Boebinger,P. Kim,A. K. Ge.Room-Temperature Quantum Hall Effect in Graphene. Science . 2007
  • 2Zhang Y,Tan Y,Stormer HL,et al.Experimental Observation of Quantum. Hall Effect and Berry’s Phase in Graphene. Nature . 2005
  • 3Xu Du,Ivan Skachko,Anthony Barker,Eva Y. Andrei.Approaching ballistic transport in suspended graphene. Nature Nanotechnology . 2008
  • 4Schwierz Frank.Graphene transistors. Nature nanotechnology . 2010
  • 5Krasheninnikov, A.V.,Banhart, F.Engineering of nanostructured carbon materials with electron or ion beams. Nature Materials . 2007
  • 6Florian Banhart,Jani Kotakoski,Arkady V. Krasheninnikov.Structural Defects in Graphene. ACS NANO . 2011
  • 7Coraux, Johann,N’Diaye, Alpha T.,Busse, Carsten,Michely, Thomas.Structural coherency of graphene on Ir(111). Nano Letters . 2008
  • 8Gass Mhairi H,Bangert Ursel,Bleloch Andrew L,Wang Peng,Nair Rahul R,Geim A K.Free-standing graphene at atomic resolution. Nature nanotechnology . 2008
  • 9Meyer, Jannik C.,Kisielowski, C.,Erni, R.,Rossell, Marta D.,Crommie, M.F.,Zettl, A.Direct imaging of lattice atoms and topological defects in graphene membranes. Nano Letters . 2008
  • 10Lahiri Jayeeta,Lin You,Bozkurt Pinar,Oleynik Ivan I,Batzill Matthias.An extended defect in graphene as a metallic wire. Nature nanotechnology . 2010

共引文献26

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部