基于GaN器件的高频高效LLC谐振变换器

High Frequency and High Efficiency LLC Resonant Converter Based on GaN Device

传统功率器件在高频下,器件本身产生较大的损耗,严重制约着高效、高功率密度的开关变换器的需求,第三代宽禁带半导体器件氮化镓(GaN)的出现能够进一步地提高变换器的效率和功率密度。GaN器件具有开关速度快以及无反向恢复损耗等特点,该文利用这一特性,结合印制电路板(PCB)平面变压器,将其应用于LLC谐振变换器中,最终设计一款48V输入、12V输出、120W、1MHz的实验样板。实验结果表明,该样板的体积得到大幅度地降低,通过采用GaN器件极大地提高了变频器的效率和功率密度,为采用GaN器件的高功率密度变换器的设计提供了参考。

At high frequencies,traditional power devices cause large losses in the device itself,which severely restricts the demand for high-efficiency and high-power density switching converters.The emergence of the third-generation wide-gap semiconductor device GaN can further improve the efficiency of the converter and power density.GaN devices have the characteristics of fast switching speed and no reverse recovery loss.This article uses this feature,combined with the PCB planar transformer,to apply it to the LLC resonant converter,and finally designed a 48 V input and 12 V output,120 W,1 MHz experimental model.The experimental results show that the size of the experimental model has been greatly reduced,through the use of GaN devices.The design provides a reference for the use of GaN devices for high power density converter.