摘要
采用射频磁控溅射技术在硅衬底和石英玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜,研究了不同衬底对AZO薄膜的结构、形貌、电学和光学性质的影响。结果表明:硅衬底上沉积的AZO薄膜具有更好的结晶质量;同时,硅衬底上AZO薄膜电阻率和载流子浓度较玻璃衬底上的性能提高10倍以上,其霍尔迁移率提高约17倍左右,硅衬底上AZO薄膜表现出优异的电学特性;所有样品在紫外光区有弱的发光峰,在可见光区有强而宽的绿光和黄光发光峰,紫外发光峰来源于ZnO的带间跃迁。此外,样品在可见光区平均透射率达90%以上。该实验研究结果对于可控生长的AZO透明导电薄膜在光伏器件上的应用具有重要意义。
Al doped ZnO(AZO)films were prepared by RF magnetron sputtering on monocrystalline silicon and quartz glass substrates.The effects of different substrates on the structure,morphology,electrical and optical properties of AZO films were studied.The results show that the crystalline quality of AZO films deposited on monocrystalline silicon substrate is better.The resistivity and carrier concentration of the thin film on monocrystalline silicon substrate are more than 10 times higher than those on glass substrate.The hall mobility of films on the silicon is about 17 times higher than those of the glass.The films on silicon show excellent electrical properties.All the samples have weak emission peaks in the ultraviolet region,and strong and wide emission peaks in the visible region.The UV emission peak is derived from the interband transition of ZnO,and the average transmittance of the sample in the visible region is more than 90%.The experimental results are of great significance for the application of controlled growth of AZO transparent conductive film in photovoltaic devices.
作者
肖原彬
王立生
赵艳芳
XIAO Yuanbin;WANG Lisheng;ZHAO Yanfang(School of Mechanical Engineering,Jiangsu University of Technology,Changzhou 213001,China)
出处
《有色金属工程》
CAS
北大核心
2022年第2期50-55,共6页
Nonferrous Metals Engineering
基金
江苏省高校自然科学基金面上项目(20KJB510015)。
关键词
AZO薄膜
衬底类型
射频磁控溅射
光伏器件
AZO thin films
substrate type
RF magnetron sputtering
photovoltaic devices