摘要
We demonstrate a high-operating-temperature(HOT)mid-wavelength InAs/GaSb superlattice heterojunction in-frared photodetector grown by metal-organic chemical vapor deposition.High crystalline quality and the near-zero lattice mis-match of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction.At a bias voltage of-0.1 V and an operating temperature of 200 K,the device exhibited a 50%cutoff wavelength of~4.9μm,a dark current dens-ity of 0.012 A/cm^(2),and a peak specific detectivity of 2.3×10^(9) cm·Hz^(1/2)/W.
基金
supported partly by the Natural Science Foundation of China with Grant No.61874179,No.61804161,No.61975121 and No.61605236
partly by the National Key Research and Development Program of China(No.2019YFB2203400)。
