摘要
A new type of vertical nanowire(VNW)/nanosheet(VNS)FETs combining a horizontal channel(HC)with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD simulation.Comparisons were carried out between conventional VNWFET and the proposed devices.FD-SOI-HC VNWFET exhibits better Ion/Ioff ratio and DIBL than Bulk-HC VNWFET.The impact of channel doping and geometric parameters on the electrical character-istic and body factor(γ)of the devices was investigated.Moreover,threshold voltage modulation by bulk/back-gate bias was im-plemented and a largeγis achieved for wide range V_(th)modulation.In addition,results of I_(on)enhancement and Ioff reduction in-dicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management.The results of preliminary experimental data are discussed as well.
基金
supported by the Academy of Integrated Circuit Innovation of Chinese Academy of Sciences under grant No Y7YC01X001。
