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Frequency dependence on polarization switching measurement in ferroelectric capacitors

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摘要 Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.
出处 《Journal of Semiconductors》 EI CAS CSCD 2022年第1期90-94,共5页 半导体学报(英文版)
基金 supported by the Ministry of Science and Technology(MOST)of China under Grant 2016YFA0203800 in part by the National Natural Science Foundation of China under Grants 61834009,62025406,92064003,61821091 the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant XDB44010300。
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