类石墨相氮化碳改性研究进展

Research Advances in the Modification of Graphitic Carbon Nitride

类石墨相氮化碳(g-C_(3)N_(4))是一种不含金属的半导体材料,它具有制备方法简单、合成原材料价格低廉、含量丰富,具有很好的物理化学性质及热稳定性等优点,并且其较窄的禁带宽度满足可以直接吸收一部分可见光的要求,这些特有的优势使其一度成为人们研究和关注的焦点。然而,它的比表面积小、光生电子和空穴复合率高以及可见光利用率不足等弊端也一直是人们努力尝试解决的问题。本文着眼于近年来g-C_(3)N_(4)改性的研究手段,主要论述了人们通过非金属掺杂、表面缺陷构建、热剥离、金属异质结和半导体异质结构建等方式对g-C_(3)N_(4)进行改性的研究进展,分析了不同手段对g-C_(3)N_(4)光催化性能增强的作用,并对未来g-C_(3)N_(4)材料改性发展方向做出了展望。

Graphite-like carbon nitride(g-C_(3)N_(4))is a metal-free semiconductor material.It has the advantages of easy preparation,low price,rich content and super physical and chemical properties,in addition,its narrow band gap meets the requirement of directly absorbing part of visible light.Due to above unique advantages,g-C_(3)N_(4)has become the focus of research and attention.However,its drawbacks of low specific surface area,high recombination rate of photoelectrons and holes and insufficient utilization of visible light are the problems that people trying to solve.This paper reviews the modification strategies of g-C_(3)N_(4),which including non-metallic doping,surface defect construction,noble metal modifying and metal heterojunction and semiconductor heterostructure construction,etc.The effect of different methods on the enhancement of the photocatalytic performance of g-C_(3)N_(4)is analyzed,and the future development direction of g-C_(3)N_(4)material modification is prospected.