失配状态对GaN HEMT器件性能影响的研究

Study on the Influence of GaN HEMT Device Performance in Mismatch Condition

失配状态会使GaN HEMT器件的输出功率、效率等偏离设计的额定值,通过EMMI和红外测试系统验证了失配状态对GaN HEMT器件性能的影响。结果表明,EMMI发光强度和器件的最高结温与器件输出功率的变化趋势相反,输出功率越大,EMMI发光强度越弱,器件的最高结温越小。进一步测试器件内部左、中、右三个位置的最高结温分布,器件不同位置的最高结温分布受匹配状态、相位、输出功率等影响较大。在不同占空比工作条件下,器件内部不同位置的最高结温分布各不相同,且温升差异更大。

Mismatch condition can make the output power and efficiency of GaN HEMT devices deviate from the design values.In this paper,the influence of device performances of GaN HEMT in mismatch condition is verified by the EMMI and infrared test systems.The results show that the change trends of luminous intensity and maximum junction temperature are opposite to the device output power.The higher the output power is,the weaker the luminous intensity is and the smaller the maximum junction temperature is.In addition,the maximum junction temperature distributions at three positions(left,center,right)inside the device are measured.The maximum junction temperature distributions at different positions are greatly affected by the matching condition,phase and output power.In the condition of different duty ratios,the distributions of maximum junction temperature in different positions inside the device are different,and the difference of temperature rise is more obvious.