应用于LTE的高效率高线性功率放大器

A High Efficiency and High Linearity Power Amplifier for LTE

基于2μm InGaP/GaAs HBT工艺,设计并实现了一种用于LTE终端的高效率、高线性功率放大器。采用模拟预失真和相位补偿器抑制幅度失真和相位失真,实现了高线性度;利用二次谐波终端电容改变电路工作模式,减少时域电压电流的重叠损耗功率,提高了功率附加效率。结果表明,在3.4 V电源电压、2.8 V偏置电压时,在工作频带815~915 MHz范围内,该功率放大器的增益大于29.5 dB,输入回波损耗小于-13.2 dB;在10 MHz LTE输入调制信号、28 dBm回退输出功率时,功率附加效率为39%~41%,第一相邻信道泄漏比ACLR;小于-38.1 dBc,第二相邻信道泄漏比ACLR_(1)小于-44.8 dBc。

Based on a 2μm InGaP/GaAs HBT process,a high efficiency,high linear power amplifier for LTE terminal was designed and implemented.Analog predistortion and phase compensator were used to suppress the amplitude distortion and phase distortion,so as to achieve high linearity.The second harmonic terminal capacitor was used to change the working mode of the circuit,and the overlapping power loss of voltage and current in time domain was reduced,so the additional power efficiency was improved.The results showed that the gain of the power amplifier was greater than 29.5 dB and the input return loss was less than-13.2 dB at 3.4 V power supply and 2.8 V bias voltage within 815~915 MHz frequency range.In the case of 10 MHz LTE input modulation signal and 28 dBm back output power,the power added efficiency was 39%~41%,the ACLR;was less than-38.1 dBc,and the ACLR_(1) was less than-44.8 dBc.