金属有机框架集成二维层状材料用于高性能短波红外光探测

High-sensitivity shortwave infrared photodetectors of metal-organic frameworks integrated on 2D layered materials

工作在短波红外区域的光电探测器因其在商业和军事领域的广泛应用而备受重视,窄带隙二维层状材料(2DLM)被认为是构筑下一代高性能红外光电探测器的潜在候选者.然而,这类材料在原子级厚度时光吸收较弱,致使其探测性能难以满足实际需求.在本文中,我们提出了一种通过集成具有优异光吸收特性的金属有机骨架(MOF)纳米粒子和高迁移率的2DLM来设计高性能短波红外光电探测器的策略,并通过构筑MOF/2DLM(Ni-CAT-1/Bi_(2)Se_(3))混合异质结光电探测器演示了该策略的可行性.由于光生载流子从MOF转移到Bi_(2)Se_(3),集成在Bi_(2)Se_(3)层上的MOF纳米颗粒使异质结的光电流增加了2-3个数量级.该混合异质结光电探测器在1500 nm光照下的响应度和探测度分别达4725 A W^(−1)和3.5×10^(13) Jones.如此优异性能主要源于增强的光吸收和光门控效应的协同作用.本文提出的集成MOF光敏材料和2DLM的策略为未来构建高性能短波红外光电探测器提供了思路.

Photodetectors operating in the shortwave infrared region are of great significance due to their extensive applications in both commercial and military fields.Narrowbandgap two-dimensional layered materials(2DLMs)are considered as the promising candidates for constructing nextgeneration high-performance infrared photodetectors.Nevertheless,the performance of 2DLMs-based photodetectors can hardly satisfy the requirements of practical applications due to their weak optical absorption.In the present study,a strategy was proposed to design high-performance shortwave infrared photodetectors by integrating metalorganic frameworks(MOFs)nanoparticles with excellent optical absorption characteristics and 2DLM with high mobility.Further,this study demonstrated the practicability of this strategy in a MOF/2DLM(Ni-CAT-1/Bi_(2)Se_(3))hybrid heterojunction photodetector.Due to the transfer of photo-generated carriers from the MOF to Bi_(2)Se_(3),the MOF nanoparticles integrated on the Bi_(2)Se_(3) layer can increase the photocurrent by 2-3 orders of magnitude.The resulting photodetector presented a high responsivity of 4725 A W^(−1) and a superior detectivity of 3.5×10^(13) Jones at 1500 nm.The outstanding performance of the hybrid heterojunction arises from the synergistic function of the enhanced optical absorption and photogating effect.In addition,the proposed device construction strategy combining MOF photosensitive materials with 2DLMs shows a high potential for the future high-performance shortwave infrared photodetectors.