摘要
激光显示、医疗设备及量子通信迫切需求高性能GaN基绿光激光二极管(LD).研制绿光LD最大的挑战是生长高势能均匀性的InGaN/GaN多量子阱.我们采用各种光学测量手段对绿光LD结构和芯片进行了表征.在激发功率密度为7 W cm^(-2)时,300 K下光致发光半高宽为108 meV,电流密度为20 A cm^(-2)时,电致发光半高宽为114 meV,这些研究结果表明势能均匀性得到了显著改善.同时,由变温光致发光测试得到的表征局域态分布宽度的σ值和由时间分辨光致发光测试得到的表征激子局域带尾态的E0值都很小,进一步表明势能均匀性很好.由于势能均匀性的极大改善,实现了斜率效率0.8 W A^(-1),输出光功率可以达到1.7 W的绿光LD芯片.
High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 nm)were realized by Osram Corp until 2009[5],which was 15 years after the first violet InGaN LDs.The greatest challenge is the growth of InGaN/(In)GaN multiple-quantum-well(MQW)active regions with high potential homogeneity.The potential fluctuation becomes pronounced as the indium composition increases in InGaN quantum wells(QWs)[6]due to the composition and interface fluctuation.
作者
田爱琴
胡磊
李暄
吴思
徐鹏
王旦
周韧林
郭炳磊
李方直
周伟
李德尧
池田昌夫
杨辉
刘建平
Aiqin Tian;Lei Hu;Xuan Li;Si Wu;Peng Xu;Dan Wang;Renlin Zhou;Binglei Guo;Fangzhi Li;Wei Zhou;Deyao Li;Masao Ikeda;Hui Yang;Jianping Liu(Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Guangdong(Foshan)Branch,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Foshan 528000,China)
基金
financially supported by the National Key Research and Development Program of China(2017YFE0131500)
the National Natural Science Foundation of China(61834008,61704184 and 61804164)
the Key Research and Development Program of Jiangsu province(BE2020004)
the Natural Science Foundation of Jiangsu Province(BK20180254)
Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。
