基于TSV的三维集成螺旋电感等效电路模型

Equivalent Circuit Model for TSV-Based 3D Integrated Spiral Inductor

基于硅通孔(TSV)技术,可以实现微米级三维无源电感的片上集成,可应用于微波/射频电路及系统的微型化、一体化三维集成。考虑到三维集成电路及系统中复杂、高密度的电磁环境,在TSV电感的设计和使用中,必须对其电路性能及各项参数指标进行精确评估及建模。采用解析方法对电感进行等效电路构建和寄生参数建模,并通过流片测试对模型进行了验证。结果表明,模型的S参数结果与三维仿真结果吻合良好,证实了等效电路构建的精确性。采用所建立的等效电路模型可以提高TSV电感的设计精度和仿真效率,解决微波电路设计及三维电磁场仿真过程中硬件配置要求高、仿真速度慢等问题。

Based on through silicon via(TSV)technology,on-chip integration of micron-level 3 D passive inductors can be realized,which can be applied to the miniaturization and 3 D integration of microwave/RF circuits and systems.Considering the complex and high density electromagnetic environment in 3 D integrated circuits and systems,it is necessary to accurately evaluate and model the circuit performance and parameters in the design and application of TSV inductors.The equivalent circuit construction and parasitic parameter modeling of inductance were carried out by analytical method,and the model was verified by tape-out and measurement.The results show that the S parameters derived from the model and 3 D simulation are matched well,which proves the accuracy of the eguivalent circuit construction.Design accuracy and simulation efficiency of TSV inductors can be improved by using the proposed equivalent circuit model,and the problems of high hardware configuration requirements and slow simulation speed in microwave circuit design and 3 D electromagnetic field simulation can be solved.